TiC陶瓷的长期抗氧化性是其航天航空领域应用的关键参数，必须在高温和各种气流环境下进行细致的评估。采用热压烧结法制备TiC单相陶瓷，通过热重-差示扫描热分析仪（TG-DSC）分析TiC陶瓷室温至1500 ℃的非等温氧化性能。通过管式氧化炉分析TiC陶瓷在不同环境（温度：1000，1200，1500 ℃，气氛：静态空气，单向空气流，低氧分压气流）下的等温氧化性能，采用单位面积质量变化表征其氧化速率。结果表明：TiC陶瓷在1200~1500 ℃时的扩散活化能约为378.78 kJ/mol，反应活化能约为17.82 kJ/mol。TiC陶瓷氧化后，具有TiO₂氧化层、TiC _x O _y 中间层和TiC基体3层结构。氧化动力学结果表明：TiC陶瓷在1200 ℃时氧化速率由反应速率控制，在1500 ℃时由氧的扩散控制，而在1000 ℃时初始阶段（前100 min）为扩散控制，之后则为反应控制。在低氧分压的气流环境下，TiC陶瓷高温氧化的反应速率和扩散速率均受到抑制，可以形成较为致密的TiO₂氧化层。

The long-term oxidation resistance of TiC ceramics is a key parameter for their application in aerospace industries and must be carefully evaluated at high temperatures and various airflow environments. TiC single-phase ceramics are prepared by hot-pressed sintering. The non-isothermal oxidation properties of TiC ceramics from room temperature to 1500 ℃ are analyzed by thermogravimetry-differential scanning calorimeter （TG-DSC） thermal analyzer. The isothermal oxidation properties of TiC ceramics in different environments （temperature： 1000，1200，1500 ℃， atmosphere： static air， one-way air flow， low oxygen partial pressure air flow） are analyzed by a tubular oxidation furnace， and its oxidation rate is characterized by monitoring the change in mass per unit area. The results show that the diffusion activation energy of TiC ceramics at 1200-1500 ℃ is about 378.78 kJ/mol， and the reaction activation energy is about 17.82 kJ/mol. TiC ceramics have a three-layer structure of TiO₂ oxide layer， TiC _x O _y interlayer and TiC substrate after oxidation. The results of oxidation kinetics indicate that the oxidation rate is controlled by reaction rate at 1200 ℃， and is controlled by oxygen diffusion at 1500 ℃. At 1000 ℃， the oxidation rate in the initial stage （the first 100 min） is controlled by diffusion， then by reaction. In the low oxygen partial pressure air flow environment， the reaction rate and diffusion rate of high-temperature molecular oxygen oxidation of TiC ceramics are both inhibited， and a relatively dense TiO₂ oxide layer can be formed.