具有均匀凹槽势垒结构的横向AlGaN/GaN高电子迁移率晶体管

Journal of Guilin University of Electronic Technology ›› 2021, Vol. 41 ›› Issue (04) : 266-272. DOI: 10.16725/j.cnki.cn45-1351/tn.2021.04.002

Author information +
History +

CLC number

TN386

Cite this article

Download Citations

Comments

Accesses

Citation

Detail

Sections
Recommended

/